Fabrication of transparent conducting films composed of In3+ doped CuS and their application in flexible electroluminescent devices.

Citation:

Dinesh K Patel, Kamyshny, Alexander , Ariando, , Zhen, Huang , and Magdassi, Shlomo. . 2015. “Fabrication Of Transparent Conducting Films Composed Of In3+ Doped Cus And Their Application In Flexible Electroluminescent Devices.”. J. Mater. Chem. Cjournal Of Materials Chemistry C: Materials For Optical And Electronic Devices, 3, Pp. 8700 - 8705.

Abstract:

Transparent conductive films composed of CuS were formed by wet deposition on PET at room temp. followed by annealing at 100° for 1 h. The resistance of the films was tuned by doping with In3+. A decrease of over an order of magnitude of the sheet resistance was obtained, from 1721 Ω sq-1 for undoped CuS film to 109 Ω sq-1 for In3+ doped. Transparency of the conducting films could be tuned by an appropriate selection of reaction time and In3+ concn. Films contg. 10 mol% of In3+ ions after a reaction duration of 24 h have a sheet resistance of \~270 Ω sq-1 and a transparency of \~80%. The fabricated films are characterized by excellent adhesion to the PET substrate and are suitable for use as transparent conducting electrodes (TCE) in flexible electroluminescent (EL) devices. [on SciFinder(R)]

Notes:

CAPLUS AN 2015:1243287(Journal; Online Computer File)