@article {4631,
	title = {Fabrication of transparent conducting films composed of In3+ doped CuS and their application in flexible electroluminescent devices.},
	journal = {J. Mater. Chem. CJournal of Materials Chemistry C: Materials for Optical and Electronic Devices},
	volume = {3},
	number = {33},
	year = {2015},
	note = {CAPLUS AN 2015:1243287(Journal; Online Computer File)},
	month = {2015///},
	pages = {8700 - 8705},
	publisher = {Royal Society of Chemistry},
	abstract = {Transparent conductive films composed of CuS were formed by wet deposition on PET at room temp. followed by annealing at 100{\textdegree} for 1 h. The resistance of the films was tuned by doping with In3+. A decrease of over an order of magnitude of the sheet resistance was obtained, from 1721 Ω sq-1 for undoped CuS film to 109 Ω sq-1 for In3+ doped. Transparency of the conducting films could be tuned by an appropriate selection of reaction time and In3+ concn. Films contg. 10 mol\% of In3+ ions after a reaction duration of 24 h have a sheet resistance of \~270 Ω sq-1 and a transparency of \~80\%. The fabricated films are characterized by excellent adhesion to the PET substrate and are suitable for use as transparent conducting electrodes (TCE) in flexible electroluminescent (EL) devices. [on SciFinder(R)]},
	keywords = {copper sulfide transparent conducting film indium doping electroluminescent device},
	isbn = {2050-7534},
	author = {Patel, Dinesh K. and Kamyshny, Alexander and Ariando and Zhen, Huang and Magdassi, Shlomo.}
}
