@article {Sadhu2021-uw,
	title = {Dual Role of Cu-Chalcogenide as Hole-Transporting Layer and Interface Passivator for p{\textendash}i{\textendash}n Architecture Perovskite Solar Cell (Adv. Funct. Mater. 38/2021)},
	journal = {Advanced Functional Materials},
	volume = {31},
	number = {38},
	year = {2021},
	month = {sep},
	pages = {2170282},
	publisher = {John Wiley \& Sons, Ltd},
	abstract = {Hole-Transporting Layers In article number 2103807, Lydia Helena Wong and co-workers use Al-doped CuS as a hole transport layer (HTL) for perovskite solar cells. Here, it has been demonstrated that, due to the interaction between sulfur and lead, better perovskite crystallization takes place at the interface. Because of this improved interface quality, the sulfide-HTL based devices outperform the oxide HTL-based devices in terms of ambient stability.},
	keywords = {defects, inorganic hole, interface passivation, sulfide, transport layers},
	author = {Sadhu, Anupam and Rai, Monika and Salim, Teddy and Jin, Xin and Tan, Joel Ming Rui and Leow, Shin Woei and Ahmed, Mahmoud G and Magdassi, Shlomo and Mhaisalkar, Subodh G and Wong, Lydia Helena}
}
